English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 4.3 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 550 mW |
| 阻抗（最大）（zzt）: | 90 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 100 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SC-90, SOD-323F |
| 供应商设备包: | SOD-323F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TZQ5228B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD80 |
|
TZMB5V6-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD80 |
|
SJPZ-E20VSanken Electric Co., Ltd. |
DIODE ZENER 20V 1W SJP |
|
CDLL5518BRoving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AB |
|
BZX84C6V2ET1Sanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.2V 225MW SOT23-3 |
|
TZMB51-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 500MW SOD80 |
|
1N5750BRoving Networks / Microchip Technology |
DIODE ZENER 39V 500MW DO35 |
|
BZX384C20-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 200MW SOD323 |
|
BZG05C39-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 1.25W DO214AC |
|
SZ1SMB5919BT3GRochester Electronics |
ZENER DIODE, 5.6V, 5%, 0.55W, UN |
|
1PMT5951BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 120V 3W DO216AA |
|
BZX84C18-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 300MW SOT23-3 |
|
BZV49-C4V3,115Nexperia |
DIODE ZENER 4.3V 1W SOT89 |
