English
简体中文
CAP CER 0.047UF 25V X7R 0603
DIODE ZENER 33V 1W DO213AB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/115 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 33 V |
| 宽容: | ±1% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 45 Ohms |
| 电流 - 反向泄漏@ vr: | 10 µA @ 25.1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF (Glass) |
| 供应商设备包: | DO-213AB (MELF, LL41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4735G R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 6.2V 1W DO204AL |
|
1N5231BSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 5.1V 500MW DO35 |
|
BZD27C27P RVGTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 1W SUB SMA |
|
CZRB3062-GComchip Technology |
DIODE ZENER 62V 3W DO214AA |
|
NTE5092ANTE Electronics, Inc. |
DIODE ZENER 68V 1W DO35 |
|
BZD27B160P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 160V 800MW DO219AB |
|
BZG05C16-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.25W DO214AC |
|
1N4753CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 36V 1W DO204AL |
|
MMSZ4711T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 27V 500MW SOD123 |
|
TLZ33B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW SOD80 |
|
1N6634Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 5W E AXIAL |
|
BZT52H-B51,115Nexperia |
DIODE ZENER 51V 375MW SOD123F |
|
1SMB5936 M4GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 3W DO214AA |