类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 4.7 V |
宽容: | ±2% |
功率 - 最大值: | 350 mW |
阻抗(最大)(zzt): | 80 Ohms |
电流 - 反向泄漏@ vr: | 3 µA @ 2 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
供应商设备包: | SOT-23 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1SMB5930 M4GTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 3W DO214AA |
|
JAN1N4958DRoving Networks / Microchip Technology |
DIODE ZENER 10V 5W E AXIAL |
|
BZX85B20-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 1.3W DO41 |
|
BZD27C20P MHGTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 1W SUB SMA |
|
1N5926BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 11V 1.25W DO213AB |
|
SMBJ5343AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 5W SMBJ |
|
UFZVFHTE-1724BROHM Semiconductor |
DIODE ZENER 24V 500MW UMD2 |
|
JAN1N4959DUSRoving Networks / Microchip Technology |
DIODE ZENER 11V 5W D5B |
|
BZD27B43P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 800MW DO219AB |
|
BZX84-A4V7,215Nexperia |
DIODE ZENER 4.7V 250MW TO236AB |
|
SZMMBZ5245BLT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 15V 225MW SOT23-3 |
|
BZT52-C16,118Rochester Electronics |
ZENER DIODE, 16V, 5%, 0.41W, SIL |
|
BZT52C39 RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 39V 500MW SOD123F |