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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 10 V |
| 宽容: | ±10% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 7 Ohms |
| 电流 - 反向泄漏@ vr: | 10 µA @ 7.6 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF |
| 供应商设备包: | MELF DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JAN1N4581AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO213AA |
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1N4747G A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 1W DO204AL |
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ZMY27-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 1W DO213AB |
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BZT52B4V3 RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 4.3V 500MW SOD123F |
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SMBJ5376B-TPMicro Commercial Components (MCC) |
DIODE ZENER 87V 5W DO214AA |
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BZD27C12P R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 12.05V 1W SUB SMA |
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BZD27C56P RFGTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 1W SUB SMA |
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JAN1N4956DRoving Networks / Microchip Technology |
DIODE ZENER 8.2V 5W E AXIAL |
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GDZ9V1B-HG3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 200MW SOD323 |
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MMBZ4693-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 350MW SOT23-3 |
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TZM5251B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW SOD80 |
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JAN1N4462USRoving Networks / Microchip Technology |
DIODE ZENER 7.5V 1.5W D5A |
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FLZ16VCRochester Electronics |
DIODE ZENER 16.1V 500MW SOD80 |
