English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 5.6 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 11 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 3 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-123 |
| 供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD27C4V7P-M-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 800MW DO219AB |
|
DZ2J10000LPanasonic |
DIODE ZENER 10V 200MW SMINI2 |
|
NZD5V6MUT5GRochester Electronics |
DIODE ZENER 5.6V 300MW 2-X3DFN |
|
BZX384B62-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 200MW SOD323 |
|
JAN1N4108UR-1Roving Networks / Microchip Technology |
DIODE ZENER 14V DO213AA |
|
CZRUR52C6V8Comchip Technology |
DIODE ZENER 6.8V 150MW 0603 |
|
BZX55B5V6-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW DO35 |
|
JAN1N821UR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
MMBZ5239ELT1GRochester Electronics |
DIODE ZENER 9.1V 0.225W 4.95% |
|
1N5937AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W DO204AL |
|
SML4746HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 1W DO214AC |
|
MMBZ5250B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 225MW SOT23-3 |
|
1N5999ARoving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
