类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
电压 - 齐纳 (nom) (vz): | 2.4 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 100 Ohms |
电流 - 反向泄漏@ vr: | 100 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZM55C4V3-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW MICROMELF |
|
JAN1N4618C-1Roving Networks / Microchip Technology |
DIODE ZENER 2.7V 500MW DO35 |
|
BZT52C36-F2-0000HF |
ZENER DIODE 36V 0.5W SOD-123 |
|
CDLL4688Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO213AA |
|
SMBJ5952C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 130V 2W SMBJ |
|
JAN1N4473DRoving Networks / Microchip Technology |
DIODE ZENER 22V 1.5W DO41 |
|
BZX384C7V5-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 200MW SOD323 |
|
1PGSMA4763HM2GTSC (Taiwan Semiconductor) |
DIODE ZENER 91V 1.25W DO214AC |
|
PLZ20C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW DO219AC |
|
1PGSMA4741HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 1.25W DO214AC |
|
JAN1N3045CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
JANTXV1N5525B-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
HZU20B1TRF-ERochester Electronics |
DIODE ZENER |