类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 8.2 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 3.5 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 6.5 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | SMA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMAJ4731E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 2W DO214AC |
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1N5243B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 500MW DO35 |
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JAN1N5526D-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO35 |
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SMBZ5932B-E3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 3W DO214AA |
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MTZJ2V7SA R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 2.65V 500MW DO34 |
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EDZVFHT2R3.9BROHM Semiconductor |
DIODE ZENER 3.9V 150MW EMD2 |
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MMBZ5236C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 225MW SOT23-3 |
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CDLL5249BRoving Networks / Microchip Technology |
DIODE ZENER 19V 10MW DO213AB |
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HZS11B2TD-ERochester Electronics |
DIODE ZENER 0.4W |
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JANTX1N3821D-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 1W DO41 |
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1N5994CRoving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO35 |
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TZMC4V3-M-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD80 |
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1N5227A (DO-35)Microsemi |
DIODE ZENER 3.6V 500MW DO35 |