CAP CER 47PF 50V NP0 1808
DIODE ZENER 10V 3W DO216AA
MAX PERF SNAP-IN SNGL STAGE IEC
DC DC CONVERTER 12V 250W
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 10 V |
宽容: | ±20% |
功率 - 最大值: | 3 W |
阻抗(最大)(zzt): | 4.5 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 8 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-216AA |
供应商设备包: | DO-216AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4125C-1Roving Networks / Microchip Technology |
DIODE ZENER 47V DO35 |
|
GLL4756A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 1W MELF |
|
SMBJ5387CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 190V 5W SMBJ |
|
JAN1N4112DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 18V DO213AA |
|
1N5925CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 10V 1.5W DO204AL |
|
1N4761AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 75V 1W DO204AL |
|
BZD27B43P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 800MW DO219AB |
|
BZT52B16 RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 500MW SOD123F |
|
HZS7C2LTD-ERochester Electronics |
DIODE ZENER |
|
JANTX1N3016CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1W DO213AB |
|
CZRUR52C13-HFComchip Technology |
DIODE ZENER 13V 150MW 0603 |
|
BZD27B6V2P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 800MW DO219AB |
|
MMSZ4707-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW SOD123 |