类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 100 V |
宽容: | ±6% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 75 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5919PE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 1.5W DO204AL |
|
1N5345BNTE Electronics, Inc. |
DIODE ZENER 8.7V 5W AXIAL |
|
MMSZ5262C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 500MW SOD123 |
|
JAN1N4970USRoving Networks / Microchip Technology |
DIODE ZENER 33V 5W D5B |
|
EDZVFHT2R10BROHM Semiconductor |
DIODE ZENER 10V 150MW EMD2 |
|
BZX84C27-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 300MW SOT23-3 |
|
1N4747AHR1GTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 1W DO204AL |
|
JANTX1N3040CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 68V 1W DO213AB |
|
SML4739AHE3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1W DO214AC |
|
BZD27C3V6P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 800MW DO219AB |
|
AMMSZ5239B-HFComchip Technology |
DIODE ZENER 9.1V 500MW SOD123 |
|
BZX79-B10,133Nexperia |
DIODE ZENER 10V 400MW ALF2 |
|
BZD27C39P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 800MW DO219AB |