类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 2.53 V |
宽容: | ±3.95% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 100 Ohms |
电流 - 反向泄漏@ vr: | 120 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 2-SMD, Flat Lead |
供应商设备包: | TUMD2M |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZV55-B7V5,115Nexperia |
DIODE ZENER 7.5V 500MW LLDS |
|
JANTX1N4622UR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 500MW DO213AA |
|
GDZ2V4B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.4V 200MW SOD323 |
|
MMSZ4701-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 14V 500MW SOD123 |
|
SZMM3Z10VT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 10V 300MW SOD323 |
|
JANTX1N4616CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 2.2V 500MW DO213AA |
|
CZRER52C27Comchip Technology |
DIODE ZENER 27V 150MW 0503 |
|
MMBZ5254C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 225MW SOT23-3 |
|
JAN1N4983USRoving Networks / Microchip Technology |
DIODE ZENER 110V 5W D5B |
|
MMBZ5262BLT1Rochester Electronics |
DIODE ZENER 51V 225MW SOT23-3 |
|
BZG05B10-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 1.25W DO214AC |
|
JANTX1N979DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 56V 500MW DO213AA |
|
BZX85C10-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 1.3W DO41 |