English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 15 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 16 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 11.4 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AA, DO-7, Axial |
| 供应商设备包: | DO-7 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMBZ5241B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 225MW SOT23-3 |
|
MAZ8220GMLPanasonic |
DIODE ZENER 22V 150MW SMINI2 |
|
BZD27B68P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 800MW DO219AB |
|
MMBZ5264C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 60V 225MW SOT23-3 |
|
PLZ7V5B-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 7.26V 960MW DO219AC |
|
3EZ16D5RLGRochester Electronics |
DIODE ZENER 16V 3W AXIAL |
|
PLZ12C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 500MW DO219AC |
|
1N4754CPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 39V 1W DO204AL |
|
TZMB36-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 500MW SOD80 |
|
PTZTE257.5BROHM Semiconductor |
DIODE ZENER 7.9V 1W PMDS |
|
JANTXV1N4483USRoving Networks / Microchip Technology |
DIODE ZENER 56V 1.5W D5A |
|
JANTXV1N5519B-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO35 |
|
BZT52B3V0 RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3V 500MW SOD123F |
