类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 30 V |
宽容: | ±5% |
功率 - 最大值: | 300 mW |
阻抗(最大)(zzt): | 80 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 21 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | - |
安装类型: | Surface Mount |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
供应商设备包: | SOT-23 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N3018B-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1W DO41 |
|
TZX10B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 500MW DO35 |
|
BZT52C13Diotec Semiconductor |
DIODE ZENER 13V 500MW SOD123F |
|
TLZ6V2B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW SOD80 |
|
MMSZ4717-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 500MW SOD123 |
|
BZX85C15Sanyo Semiconductor/ON Semiconductor |
DIODE ZENER 15V 1W DO204AL |
|
1N4746AURRoving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO213AB |
|
1PMT5942CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 3W DO216AA |
|
DDZ36S-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 36V 200MW SOD323 |
|
BZT52C8V2-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 410MW SOD123 |
|
BZD27B5V6P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 800MW DO219AB |
|
JANTX1N968CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO213AA |
|
BZV90-C39115Rochester Electronics |
DIODE ZENER 36V 1.5W 5% UNI |