English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 7.5 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1.5 W |
| 阻抗（最大）（zzt）: | 3 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UDZSTE-177.5BROHM Semiconductor |
DIODE ZENER 7.5V 200MW UMD2 |
|
SML4747-E3/61Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 1W DO214AC |
|
BZX84C33-F2-0000HF |
ZENER DIODE 33V 0.35W SOT-23-3L |
|
1N5929CPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 15V 1.5W DO204AL |
|
BZD27C130P MTGTSC (Taiwan Semiconductor) |
DIODE ZENER 132.5V 1W SUB SMA |
|
JAN1N5529B-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
JAN1N3016DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1W DO213AB |
|
1PMT5927A/TR7Roving Networks / Microchip Technology |
DIODE ZENER 12V 3W DO216AA |
|
BZT52C22-TPMicro Commercial Components (MCC) |
DIODE ZENER 22V 200MW SOD123 |
|
BZX84B4V3-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 300MW SOT23-3 |
|
BZX84W-C9V1FNexperia |
DIODE ZENER 9.1V 275MW SOT323 |
|
BZG03C270-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 270V 1.25W DO214AC |
|
1N5931APE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 18V 1.5W DO204AL |
