类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 30 V |
宽容: | ±5% |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | 40 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 22.8 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTX1N3045BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
BZG04-10-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 1.25W DO214AC |
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PDZ16BGWJNexperia |
DIODE ZENER 16V 365MW SOD123 |
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BZD17C110P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 800MW DO219AB |
|
SMBJ5924C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 2W SMBJ |
|
BZD27C200PWTSC (Taiwan Semiconductor) |
DIODE ZENER 200V 1W SOD123W |
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SMBJ5947AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 82V 2W SMBJ |
|
BZX384C6V2-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 200MW SOD323 |
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BZT52B10-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 410MW SOD123 |
|
SMAJ4752A-TPMicro Commercial Components (MCC) |
DIODE ZENER 33V 1W DO214AC |
|
3SMAJ5936B-TPMicro Commercial Components (MCC) |
DIODE ZENER 30V 3W DO214AC |
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PZU6.2B3A,115Nexperia |
DIODE ZENER 6.2V 320MW SOD323 |
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BZD27C100P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 100V 800MW DO219AB |