English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 4.7 V |
| 宽容: | ±1.91% |
| 功率 - 最大值: | 250 mW |
| 阻抗（最大）（zzt）: | 80 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 2 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
| 供应商设备包: | SOT-23-3 (TO-236) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JAN1N4465CRoving Networks / Microchip Technology |
DIODE ZENER 10V 1.5W DO41 |
|
MMBZ5227B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 225MW SOT23-3 |
|
NZX6V2B,133Rochester Electronics |
DIODE ZENER 6.2V 500MW ALF2 |
|
MMBZ5242B-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 12V 350MW SOT23-3 |
|
1PGSMC5348 R7GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 5W DO214AB |
|
BZX884-C47,315Rochester Electronics |
DIODE ZENER 47V 250MW DFN1006-2 |
|
TZS4698-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW SOD80 |
|
ZMY18-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 1W DO213AB |
|
JAN1N5533BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 13V 500MW DO213AA |
|
1N5934BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 1.25W DO213AB |
|
MM3Z10VBSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 10V 200MW SOD323F |
|
JAN1N3037BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 51V 1W DO213AB |
|
SZMM3Z3V9T1GXNexperia |
SZMM3Z3V9T1G/SOD323/SOD2 |
