类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 5.1 V |
宽容: | ±10% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 88 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1SMA5943BT3GRochester Electronics |
ZENER DIODE, 56V, 5%, 0.5W, UNID |
|
GDZ18B-HG3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 200MW SOD323 |
|
1N823ARoving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
CDLL5917BRoving Networks / Microchip Technology |
DIODE ZENER 4.7V 1.25W DO213AB |
|
1PMT4132CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 82V 1W DO216 |
|
JANTX1N4477CRoving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W DO41 |
|
1PGSMB5933 R5GTSC (Taiwan Semiconductor) |
DIODE ZENER 22V 3W DO214AA |
|
BZT585B16T-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 16V 350MW SOD523 |
|
PLZ10A-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 500MW DO219AC |
|
1N759ARochester Electronics |
DIODE ZENER 12V 500MW DO35 |
|
JANTX1N5525CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
2M51Z A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 2W DO204AC |
|
ZPD43Diotec Semiconductor |
DIODE ZENER 43V 500MW DO35 |