类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 18 V |
宽容: | ±5% |
功率 - 最大值: | 1.3 W |
阻抗(最大)(zzt): | 20 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 13.7 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HZU5CLLTRF-ERochester Electronics |
DIODE ZENER |
|
BZT55B30-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW SOD80 |
|
JANTX1N4958Roving Networks / Microchip Technology |
DIODE ZENER 10V 5W AXIAL |
|
TLZ9V1A-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 500MW SOD80 |
|
NTE5267AKNTE Electronics, Inc. |
DIODE ZENER 28V 50W DO5 |
|
UDZVFHTE-1724BROHM Semiconductor |
DIODE ZENER 24V 200MW UMD2 |
|
NZX4V3C,133Rochester Electronics |
DIODE ZENER 4.3V 500MW ALF2 |
|
1PMT4122C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 36V 1W DO216 |
|
BZT52C33-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 410MW SOD123 |
|
BZV55C43 L0GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 500MW MINI MELF |
|
JANTX1N4975USRoving Networks / Microchip Technology |
DIODE ZENER 51V 5W D5B |
|
JAN1N4985DUSRoving Networks / Microchip Technology |
DIODE ZENER 130V 5W D5B |
|
1PMT5943C/TR7Roving Networks / Microchip Technology |
DIODE ZENER 56V 3W DO216AA |