类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 15 V |
宽容: | ±5% |
功率 - 最大值: | 250 mW |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 11 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 100 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | SOD-882 |
供应商设备包: | DFN1006-2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GDZ36B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 200MW SOD323 |
|
BZX584C15-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD523 |
|
BZT52B3V0-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3V 410MW SOD123 |
|
1N5922P/TR12Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1.5W DO204AL |
|
MMSZ5224BT1Rochester Electronics |
DIODE ZENER 2.8V 500MW SOD123 |
|
BZX884-C15,315Nexperia |
DIODE ZENER 15V 250MW DFN1006-2 |
|
1N4736A,133Nexperia |
DIODE ZENER 6.8V 1W DO41 |
|
JAN1N4494DRoving Networks / Microchip Technology |
DIODE ZENER 160V 1.5W DO41 |
|
JAN1N4113D-1Roving Networks / Microchip Technology |
DIODE ZENER 19V DO35 |
|
1N4737ASanyo Semiconductor/ON Semiconductor |
DIODE ZENER 7.5V 1W DO41 |
|
BZT52B36-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 410MW SOD123 |
|
BZD27C16PHRVGTSC (Taiwan Semiconductor) |
DIODE ZENER 16.2V 1W SUB SMA |
|
JANTX1N749DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO213AA |