类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/406 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.2 V |
宽容: | ±1% |
功率 - 最大值: | 1.5 W |
阻抗(最大)(zzt): | 4 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 3.72 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSZ15T1GRochester Electronics |
ZENER DIODE, 15V, 5%, 0.5W, UNID |
|
1N5918CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 1.5W DO204AL |
|
JANTX1N973BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 33V 500MW DO213AA |
|
BZX84C20-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 300MW SOT23-3 |
|
CZ5352B TR PBFREECentral Semiconductor |
DIODE ZENER 15V 5W DO201 |
|
ZPY39-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 1.3W DO41 |
|
JANTX1N4112DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 500MW DO35 |
|
1PMT5929BT1GRochester Electronics |
DIODE ZENER 15V 3.2W POWERMITE |
|
MMBZ5247C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 17V 225MW SOT23-3 |
|
SZBZX84C6V2ET1GRochester Electronics |
DIODE ZENER 6.2V 225MW SOT23-3 |
|
1SMB5955 R5GTSC (Taiwan Semiconductor) |
DIODE ZENER 180V 3W DO214AA |
|
JAN1N4482CRoving Networks / Microchip Technology |
DIODE ZENER 51V 1.5W DO41 |
|
BZT52B4V7S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 4.7V 200MW SOD323F |