类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 16 V |
宽容: | ±5% |
功率 - 最大值: | 1.5 W |
阻抗(最大)(zzt): | 10 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 12.2 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMAJ4745AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 2W DO214AC |
|
MMSZ39ET1Rochester Electronics |
DIODE ZENER |
|
JAN1N4120UR-1Roving Networks / Microchip Technology |
DIODE ZENER 30V DO213AA |
|
MMBZ5261C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 225MW SOT23-3 |
|
1PGSMA110Z M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 110V 1.25W DO214AC |
|
JANTX1N4117DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 25V 500MW DO213AA |
|
BZD27C27P-M-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
MMBZ5237C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 225MW SOT23-3 |
|
1N6316USRoving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW MELF |
|
YFZVFHTR22BROHM Semiconductor |
DIODE ZENER 21.18V 500MW TUMD2M |
|
MMSZ4690-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD123 |
|
SMAJ4748CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 22V 2W DO214AC |
|
1N4746AP-TPMicro Commercial Components (MCC) |
DIODE ZENER 18V 1W DO-41 |