类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.2 V |
宽容: | ±20% |
功率 - 最大值: | 10 mW |
阻抗(最大)(zzt): | 7 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 4 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AB, MELF |
供应商设备包: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CZRF52C3V6-HFComchip Technology |
DIODE ZENER 3.6V 200MW 1005 |
|
MMSZ5266C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 500MW SOD123 |
|
1N5250B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW DO35 |
|
BZD27C51P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
MMBZ4622-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 350MW SOT23-3 |
|
BZX79-C30,143Nexperia |
DIODE ZENER 30V 400MW ALF2 |
|
PDZVTFTR10BROHM Semiconductor |
DIODE ZENER 10V 1W PMDTM |
|
JAN1N970BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO213AA |
|
SMBJ5930C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 2W SMBJ |
|
BZT55C2V4 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 2.4V 500MW MINI MELF |
|
JAN1N756CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO213AA |
|
BZV85-C18,113Nexperia |
DIODE ZENER 18V 1.3W DO41 |
|
JAN1N3031CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO213AB |