类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 75 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 175 Ohms |
电流 - 反向泄漏@ vr: | - |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HZS4B2TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
1N4735ASanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.2V 1W DO41 |
|
1N4736PE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1W DO204AL |
|
PZU5.6BL,315Nexperia |
DIODE ZENER 5.6V 250MW DFN1006-2 |
|
MMBZ5266B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 225MW SOT23-3 |
|
HZS30-3TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
BZT52-B15XNexperia |
DIODE ZENER 15V 590MW SOD123 |
|
1SMB5931HM4GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 3W DO214AA |
|
BZT55C43-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 500MW SOD80 |
|
JAN1N5531BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 11V 500MW DO213AA |
|
HZS5A1TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
ACZRA4753-HFComchip Technology |
DIODE ZENER 36V 1W DO214AC |
|
JAN1N5528C-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO35 |