English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 16 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 5 W |
| 阻抗（最大）（zzt）: | 3 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 12.2 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD27C56PHRFGTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 1W SUB SMA |
|
JANTX1N5519BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO213AA |
|
1PMT4131C/TR7Roving Networks / Microchip Technology |
DIODE ZENER 75V 1W DO216 |
|
MMBZ5245BLT1Rochester Electronics |
DIODE ZENER 15V 225MW SOT23-3 |
|
BZD17C33P RQGTSC (Taiwan Semiconductor) |
DIODE ZENER 33V 800MW SUB SMA |
|
1PMT4104CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 10V 1W DO216 |
|
JANTX1N6348Roving Networks / Microchip Technology |
DIODE ZENER 100V 500MW DO35 |
|
BZD27B51P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
HZS4.3NB1TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
1N5921BPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1.5W DO204AL |
|
BZX55B24-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW DO35 |
|
1PMT5952/TR7Roving Networks / Microchip Technology |
DIODE ZENER 130V 3W DO216AA |
|
CZRL5234B-GComchip Technology |
DIODE ZENER 6.2V 500MW SOD80 |
