类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 30 V |
宽容: | ±5% |
功率 - 最大值: | 400 mW |
阻抗(最大)(zzt): | 80 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 700 mV |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MM5Z20VRochester Electronics |
DIODE ZENER 20V 200MW SOD523F |
|
BZD27C120P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 120V 800MW DO219AB |
|
MM5Z18B-AQDiotec Semiconductor |
DIODE ZENER 18V 200MW SOD523 |
|
JANTXV1N3033DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 36V 1W DO213AB |
|
JANTX1N4117CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 25V 500MW DO213AA |
|
1PMT5945C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 68V 3W DO216AA |
|
JANTX1N825-1Roving Networks / Microchip Technology |
DIODE ZENER 5.9V 500MW DO35 |
|
BZX84B3V9-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 300MW SOT23-3 |
|
TLZ4V3A-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD80 |
|
JANTX1N4118DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 27V 500MW DO213AA |
|
1N4968USRoving Networks / Microchip Technology |
DIODE ZENER 27V 5W D5B |
|
SML4761A-E3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1W DO214AC |
|
SMBJ5371AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 60V 5W SMBJ |