RES 619 OHM 1/10W .1% AXIAL
RES 30 OHM 13W 5% AXIAL
DIODE ZENER 100V 500MW
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 100 V |
宽容: | ±0.5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 500 Ohms |
电流 - 反向泄漏@ vr: | 0.1 µA @ 76 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1PMT4101/TR13Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1W DO216 |
|
GDZ11LP3-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 11V 250MW 2DFN |
|
BZT55B12-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 500MW SOD80 |
|
BZT52C43K RKGTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 200MW SOD523F |
|
1PMT4099/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1W DO216 |
|
ACZRA4730-HFComchip Technology |
DIODE ZENER 3.9V 1W DO214AC |
|
1N965BE3Roving Networks / Microchip Technology |
DIODE ZENER 15V 500MW DO35 |
|
TSZU52C2V4 RGGTSC (Taiwan Semiconductor) |
DIODE ZENER 2.4V 150MW 0603 |
|
BZD17C9V1P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 800MW DO219AB |
|
JAN1N5531C-1Roving Networks / Microchip Technology |
DIODE ZENER 11V 500MW DO35 |
|
ACZRW5251B-GComchip Technology |
DIODE ZENER 22V 350MW SOD123FL |
|
CDLL3037Roving Networks / Microchip Technology |
DIODE ZENER 51V 1W DO213AB |
|
MMBZ5258B-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 36V 350MW SOT23-3 |