类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/437 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 3.3 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 26 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZX84B8V2-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 300MW SOT23-3 |
|
1PGSMB5936HR5GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 3W DO214AA |
|
BZX84B7V5-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 300MW SOT23-3 |
|
CLL5251B TR PBFREECentral Semiconductor |
DIODE ZENER 22V 500MW SOD80 |
|
CZRU52C20Comchip Technology |
DIODE ZENER 20V 150MW 0603 |
|
BZT52-C7V5,118Rochester Electronics |
BZT52-C7V5 - SINGLE ZENER DIODE, |
|
BZT52B13-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 410MW SOD123 |
|
BZT52B11-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 410MW SOD123 |
|
BZX384B11-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 200MW SOD323 |
|
BZD27C27P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
JANTX1N6347Roving Networks / Microchip Technology |
DIODE ZENER 91V 500MW DO35 |
|
MM3Z62VT1Rochester Electronics |
DIODE ZENER 300MW SOD323 |
|
BZT52B6V2Diotec Semiconductor |
DIODE ZENER 6.2V 500MW SOD123F |