类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 10 V |
宽容: | ±5% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 2 Ohms |
电流 - 反向泄漏@ vr: | 25 µA @ 7.6 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 1 A |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | E-MELF |
供应商设备包: | D-5B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSZ5231C-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 500MW SOD123 |
|
BZD27C43PHRQGTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1W SUB SMA |
|
JAN1N4972Roving Networks / Microchip Technology |
DIODE ZENER 39V 5W AXIAL |
|
SMBJ5365B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 36V 5W SMBJ |
|
JANTXV1N4125D-1Roving Networks / Microchip Technology |
DIODE ZENER 47V 500MW DO35 |
|
HZM10NB3TR-ERochester Electronics |
DIODE ZENER 10V 0.2W |
|
BZT52B10JS-TPMicro Commercial Components (MCC) |
DIODE ZENER 10V 200MW SOD323 |
|
1N5229C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW DO35 |
|
BZX384-B47,115Nexperia |
DIODE ZENER 47V 300MW SOD323 |
|
BZG04-200-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 240V 1.25W DO214AC |
|
JANTX1N5519D-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO35 |
|
SMBJ5935BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 27V 2W SMBJ |
|
BZX84W-C9V1XNexperia |
DIODE ZENER 9.1V 275MW SOT323 |