English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 30 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 40 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 22.8 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JAN1N4109D-1Roving Networks / Microchip Technology |
DIODE ZENER 15V DO35 |
|
MMSZ4694-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW SOD123 |
|
JANTXV1N4567A-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO35 |
|
JAN1N3038C-1Roving Networks / Microchip Technology |
DIODE ZENER 56V 1W DO41 |
|
CZRER52C4V3Comchip Technology |
DIODE ZENER 4.3V 150MW 0503 |
|
MM3Z4V3CSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 4.3V 200MW SOD323F |
|
PLZ24D-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW DO219AC |
|
1N5228C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW DO35 |
|
1N5265BDO35Microsemi |
DIODE ZENER 62V 500MW DO35 |
|
JAN1N3825CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 1W DO213AB |
|
BZG05B3V6-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 1.25W DO214AC |
|
1N6021DRoving Networks / Microchip Technology |
DIODE ZENER 75V 500MW DO35 |
|
SMBJ4745/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 2W SMBJ |
