类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 12 V |
宽容: | ±1% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 25 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 8 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
BZG05B51-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 1.25W DO214AC |
![]() |
BZX84-B24,215Nexperia |
DIODE ZENER 24V 250MW TO236AB |
![]() |
CZRA5920B-GComchip Technology |
DIODE ZENER 6.2V 1.5W DO214AC |
![]() |
JANTX1N3827CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 1W DO213AB |
![]() |
1N5254B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 500MW DO35 |
![]() |
JANTX1N4625-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO35 |
![]() |
1N5224BRochester Electronics |
DIODE ZENER 2.8V 0.5W 5% UNIDIR |
![]() |
SJPZ-N18Sanken Electric Co., Ltd. |
DIODE ZENER 18V 2W SJP |
![]() |
BZT52B15-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 410MW SOD123 |
![]() |
1N4751CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO204AL |
![]() |
SZBZX84C51ET1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 51V 225MW SOT23-3 |
![]() |
1PMT4120CE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO216 |
![]() |
CMHZ5225B TR PBFREECentral Semiconductor |
DIODE ZENER 3V 500MW SOD123 |