CAP CER 390PF 63V C0G/NP0 1808
THERM PAD 25.4MMX21.84MM 1=25/PK
DIODE ZENER 6.8V 300 MV SOT23
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.8 V |
宽容: | ±5% |
功率 - 最大值: | 300 mV |
阻抗(最大)(zzt): | - |
电流 - 反向泄漏@ vr: | - |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
供应商设备包: | SOT-23 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N4749A-T50ARochester Electronics |
DIODE ZENER 24V 1W DO41 |
|
MMSZ5241B RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 500MW SOD123F |
|
CZRFR6V2B-HFComchip Technology |
DIODE ZENER 6.2V 200MW 1005 |
|
HZS4B1TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
ZPY22Diotec Semiconductor |
DIODE ZENER 22V 1.3W DO41 |
|
1N4743P/TR8Roving Networks / Microchip Technology |
DIODE ZENER 13V 1W DO204AL |
|
BZX84B12-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 300MW SOT23-3 |
|
BZT52B3V9-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 410MW SOD123 |
|
PLZ4V7C-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.81V 960MW DO219AC |
|
GLL4743A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 1W MELF |
|
CDLL4620Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AA |
|
BZT52HC10WF-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 10V 375MW SOD123F |
|
JAN1N984C-1Roving Networks / Microchip Technology |
DIODE ZENER 91V 500MW DO35 |