类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 68 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 240 Ohms |
电流 - 反向泄漏@ vr: | 45 nA @ 47.6 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 10 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOD-123F |
供应商设备包: | SOD-123F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTX1N756D-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO35 |
|
NTE5218ANTE Electronics, Inc. |
DIODE ZENER 87V 10W DO4 |
|
JAN1N754DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 500MW DO213AA |
|
JANTX1N4471USRoving Networks / Microchip Technology |
DIODE ZENER 18V 1.5W D5A |
|
MMSZ4710-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 25V 500MW SOD123 |
|
BZV55B6V2 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 6.2V 500MW MINI MELF |
|
BZX85B15-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 1.3W DO41 |
|
JAN1N4461CRoving Networks / Microchip Technology |
DIODE ZENER 6.8V 1.5W DO41 |
|
CZRT55C30-GComchip Technology |
DIODE ZENER 30V 350MW SOT23-3 |
|
TZX6V2C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW DO35 |
|
BZT52C9V1-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 410MW SOD123 |
|
MAZS024G0LPanasonic |
DIODE ZENER 2.4V 150MW SSMINI2 |
|
1N4746A R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 1W DO204AL |