类型 | 描述 |
---|---|
系列: | BZG05B-M |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 3.6 V |
宽容: | ±1.94% |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | 20 Ohms |
电流 - 反向泄漏@ vr: | 20 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV1N5530D-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 500MW DO35 |
|
JANTX1N5535D-1Roving Networks / Microchip Technology |
DIODE ZENER 15V 500MW DO35 |
|
BZT52C36S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 36V 200MW SOD323F |
|
MMSZ4699T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 500MW SOD123 |
|
BZT52B6V8-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 410MW SOD123 |
|
PLZ6V8A-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.46V 960MW DO219AC |
|
1PMT5942A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 3W DO216AA |
|
GDZ3V9B-HG3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 200MW SOD323 |
|
JANTX1N978CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 51V 500MW DO213AA |
|
GDZ4V3B-HG3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 200MW SOD323 |
|
BZX84-C3V9,215Nexperia |
DIODE ZENER 3.9V 250MW TO236AB |
|
CZRQR52C8V2-HFComchip Technology |
DIODE ZENER 8.2V 125MW 0402 |
|
BZX84C10-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 300MW SOT23-3 |