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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 75 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 175 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 56 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N4470Roving Networks / Microchip Technology |
DIODE ZENER 16V 1.5W DO204AL |
|
1N5351BNTE Electronics, Inc. |
DIODE ZENER 14V 5W AXIAL |
|
BZX55C56-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW DO35 |
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BZD27C13PHMHGTSC (Taiwan Semiconductor) |
DIODE ZENER 13.25V 1W SUB SMA |
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BZX79C20-T50ARochester Electronics |
DIODE ZENER 20V 0.5W |
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1N4760A BK TIN/LEADCentral Semiconductor |
DIODE ZENER 68V 1W DO41 |
|
TZQ5230B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW SOD80 |
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GDZ9V1B-HG3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 200MW SOD323 |
|
BZX384C56-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 200MW SOD323 |
|
1SMB5937B-13Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 33V 550MW SMB |
|
1N4756AHR0GTSC (Taiwan Semiconductor) |
DIODE ZENER 47V 1W DO204AL |
|
BZX384C3V9-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 200MW SOD323 |
|
CDLL5249Roving Networks / Microchip Technology |
DIODE ZENER 19V 10MW DO213AB |
