类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 47 V |
宽容: | ±5% |
功率 - 最大值: | 2 W |
阻抗(最大)(zzt): | 40 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 35.8 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AC, DO-15, Axial |
供应商设备包: | DO-204AC (DO-15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTXV1N3018C-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1W DO41 |
|
MMBZ4699-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 350MW SOT23-3 |
|
UDZ7V5B-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 7.5V 200MW SOD323 |
|
1N4745AHB0GTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 1W DO204AL |
|
BZX85B6V8-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 1.3W DO41 |
|
SMBJ5342AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 5W SMBJ |
|
1PMT5927B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 12V 3W DO216AA |
|
BZX85C10RLRochester Electronics |
DIODE ZENER 10V 1.3W 6% UNID |
|
BZX84B16-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 300MW SOT23-3 |
|
1PMT5934B/TR7Roving Networks / Microchip Technology |
DIODE ZENER 24V 3W DO216AA |
|
BZX84C43-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 43V 300MW SOT23-3 |
|
JANS1N4468USRoving Networks / Microchip Technology |
DIODE ZENER 13V 1.5W D5A |
|
BZX84B3V9-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 300MW SOT23-3 |