类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.2 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 7 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 4 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | SOD-123 |
供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZT52B22S-F2-0000HF |
ZENER DIODE 22V 0.2W SOD-323 |
|
VDZT2R6.2BROHM Semiconductor |
DIODE ZENER 6.2V 100MW VMD2 |
|
MTZJ39SE R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 38.33V 500MW DO34 |
|
CZRT55C3V0-GComchip Technology |
DIODE ZENER 3V 350MW SOT23-3 |
|
JANTX1N974D-1Roving Networks / Microchip Technology |
DIODE ZENER 36V 500MW DO35 |
|
SZNZ9F2V4T5GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 2.4V 500MW SOD923 |
|
JANTXV1N5537C-1Roving Networks / Microchip Technology |
DIODE ZENER 17V 500MW DO35 |
|
BZT52B16-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 410MW SOD123 |
|
JAN1N827-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
TZX4V7A-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW DO35 |
|
SMBJ4757AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 2W SMBJ |
|
JANTX1N4624UR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO213AA |
|
JANTXV1N3822DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 1W DO213AB |