类型 | 描述 |
---|---|
系列: | - |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 27 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 80 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 18.9 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
工作温度: | -55°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MM3Z9V1T1GRochester Electronics |
ZENER DIODE, 9.1V, 6.08%, 0.2W, |
|
HZM2.7NB1TR-ERochester Electronics |
DIODE ZENER |
|
1N3338RBRoving Networks / Microchip Technology |
DIODE ZENER 82V 50W DO5 |
|
JANTX1N4571AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO213AA |
|
BZG03B75-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1.25W DO214AC |
|
UDZSTE-173.0BROHM Semiconductor |
DIODE ZENER 3V 200MW UMD2 |
|
MMSZ5265C-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 500MW SOD123 |
|
JANTX1N4123UR-1Roving Networks / Microchip Technology |
DIODE ZENER 39V 500MW DO213AA |
|
ABZT52C13-HFComchip Technology |
DIODE ZENER 13V 500MW SOD123 |
|
BZX384B15-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD323 |
|
JANTX1N985C-1Roving Networks / Microchip Technology |
DIODE ZENER 100V 500MW DO35 |
|
BZD27C160P RFGTSC (Taiwan Semiconductor) |
DIODE ZENER 162V 1W SUB SMA |
|
2M19ZHB0GTSC (Taiwan Semiconductor) |
DIODE ZENER 19V 2W DO204AC |