English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 11 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1.5 W |
| 阻抗（最大）（zzt）: | 5.5 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 8.4 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD27B33P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 800MW DO219AB |
|
1PMT4135/TR13Roving Networks / Microchip Technology |
DIODE ZENER 100V 1W DO216 |
|
TZQ5253B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 25V 500MW SOD80 |
|
ZMY30-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1W DO213AB |
|
JAN1N758AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 500MW DO213AA |
|
1N4741A,133Nexperia |
DIODE ZENER 11V 1W DO41 |
|
BZT55B18-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 500MW SOD80 |
|
CZRU52C27Comchip Technology |
DIODE ZENER 27V 150MW 0603 |
|
BZT55B4V3 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 4.3V 500MW MINI MELF |
|
1N3042B-1Roving Networks / Microchip Technology |
DIODE ZENER 82V 1W DO204AL |
|
1PMT4107E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 13V 1W DO216 |
|
BZX79C12-T50ASanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 500MW DO35 |
|
BZX384B62-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 200MW SOD323 |
