类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 110 V |
宽容: | ±5% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 125 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 79.2 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 1 A |
工作温度: | -65°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSZ5243BT1Rochester Electronics |
DIODE ZENER 13V 500MW SOD123 |
|
BZX85C4V3-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 1.3W DO41 |
|
BZT55C11-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW SOD80 |
|
CDLL4749ARoving Networks / Microchip Technology |
DIODE ZENER 24V DO213AB |
|
JAN1N4969DUSRoving Networks / Microchip Technology |
DIODE ZENER 30V 5W D5B |
|
BZV55C15 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 15V 500MW MINI MELF |
|
UDZ4V3B-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 4.3V 200MW SOD323 |
|
TZX27C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 500MW DO35 |
|
BZD27C4V7P-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 800MW DO219AB |
|
UDZVFHTE-1718BROHM Semiconductor |
DIODE ZENER 18V 200MW UMD2 |
|
BZM55B16-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW MICROMELF |
|
1N3029BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 1W DO213AB |
|
JAN1N4491Roving Networks / Microchip Technology |
DIODE ZENER 120V 1.5W DO41 |