类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 2.7 V |
宽容: | ±5% |
功率 - 最大值: | 1.3 W |
阻抗(最大)(zzt): | 20 Ohms |
电流 - 反向泄漏@ vr: | 150 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -55°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CDLL4746Roving Networks / Microchip Technology |
DIODE ZENER 18V DO213AB |
|
TZMB2V7-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 500MW SOD80 |
|
MMBZ5257ELT1GRochester Electronics |
DIODE ZENER 33V 225MW SOT23-3 |
|
MM5Z3V9ST1GRochester Electronics |
DIODE ZENER 3.9V 500MW SOD523 |
|
1N5935BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 27V 1.25W DO213AB |
|
JAN1N4493DUSRoving Networks / Microchip Technology |
DIODE ZENER 150V 1.5W D5A |
|
1N5224A (DO-35)Microsemi |
DIODE ZENER 2.8V 500MW DO35 |
|
1N4573A-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO35 |
|
BZD17C120P R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 120V 800MW SUB SMA |
|
CLL5258B TR TIN/LEADCentral Semiconductor |
DIODE ZENER 36V 500MW SOD80 |
|
JAN1N4624D-1Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO35 |
|
JAN1N4482CUSRoving Networks / Microchip Technology |
DIODE ZENER 51V 1.5W D5A |
|
SZMMBZ5248BLT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 18V 225MW SOT23-3 |