类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 43 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 250 Ohms |
电流 - 反向泄漏@ vr: | 10 nA @ 32.65 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AA (Glass) |
供应商设备包: | DO-213AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1PMT5937/TR7Roving Networks / Microchip Technology |
DIODE ZENER 33V 3W DO216AA |
|
BZX384C4V3-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 200MW SOD323 |
|
MMBZ5250BT-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 20V 150MW SOT523 |
|
1N5257BTRRochester Electronics |
DIODE ZENER 33V 500MW DO35 |
|
JAN1N4489DUSRoving Networks / Microchip Technology |
DIODE ZENER 100V 1.5W D5A |
|
SZMM3Z3V0T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3V 300MW SOD323 |
|
ACZRC5361B-GComchip Technology |
DIODE ZENER 27V 5W DO214AB |
|
BZT55C8V2 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 8.2V 500MW MINI MELF |
|
1N4915Roving Networks / Microchip Technology |
DIODE ZENER 12.8V 400MW DO7 |
|
BZD27C39P R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 39V 1W SUB SMA |
|
PTZTE258.2AROHM Semiconductor |
DIODE ZENER 8.2V 1W PMDS |
|
ACZRC5354B-GComchip Technology |
DIODE ZENER 17V 5W DO214AB |
|
MM3Z10-AQDiotec Semiconductor |
DIODE ZENER 10V 300MW SOD323 |