English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 6 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 5 W |
| 阻抗（最大）（zzt）: | 1 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 3 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 1 A |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | Axial |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MMBZ5268BLT1Rochester Electronics |
DIODE ZENER 82V 225MW SOT23-3 |
|
PLZ15B-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 500MW DO219AC |
|
CZRUR2V7B-HFComchip Technology |
DIODE ZENER 2.7V 150MW 0603 |
|
SML4758A-E3/61Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 1W DO214AC |
|
SMBZ5927B-E3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 3W DO214AA |
|
1PMT5928AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 13V 3W DO216AA |
|
BZT52B22-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 410MW SOD123 |
|
1PMT4111C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 17V 1W DO216 |
|
JANTX1N5543D-1Roving Networks / Microchip Technology |
DIODE ZENER 25V 500MW DO35 |
|
SMBJ4729AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 3.6V 2W SMBJ |
|
1PMT5950/TR13Roving Networks / Microchip Technology |
DIODE ZENER 110V 3W DO216AA |
|
MMBZ5247C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 17V 225MW SOT23-3 |
|
1N4733CP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 1W DO204AL |
