类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 62 V |
宽容: | ±10% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 125 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 47.1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZT55C12-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 500MW SOD80 |
|
1N3521ARoving Networks / Microchip Technology |
DIODE ZENER 13V 500MW DO35 |
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1N4739ATRSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 9.1V 1W DO41 |
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1N5935CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 28V 1.5W DO204AL |
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1N5225BRLRochester Electronics |
DIODE ZENER 3V SILICON UNIDIREC |
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MMSZ5248BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 18V 500MW SOD123 |
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BZT52C3V6-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 410MW SOD123 |
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MMSZ5261C-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 500MW SOD123 |
|
1PGSMA4762 M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 82V 1.25W DO214AC |
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JANTX1N753CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
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JAN1N5525D-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
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1M130ZHR0GTSC (Taiwan Semiconductor) |
DIODE ZENER 130V 1W DO204AL |
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1N4989USSemtech |
DIODE ZENER 200V 5W |