English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 200 V |
| 宽容: | - |
| 功率 - 最大值: | 800 mW |
| 阻抗（最大）（zzt）: | - |
| 电流 - 反向泄漏@ vr: | 1 µA @ 150 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | DO-219AB (SMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ5353BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 5W SMBJ |
|
BZX85C8V2-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 1.3W DO41 |
|
MMSZ5263C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW SOD123 |
|
JAN1N5528DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO213AA |
|
BZT52C6V8-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 6.8V 500MW SOD123 |
|
BZD27C27P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
JANTXV1N4496USRoving Networks / Microchip Technology |
DIODE ZENER 200V 1.5W D5A |
|
BZX55B3V3-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW DO35 |
|
BZX884-C4V7,315Nexperia |
DIODE ZENER 4.7V 250MW DFN1006-2 |
|
CDLL970BRoving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO213AB |
|
NZX5V1A,133Nexperia |
DIODE ZENER 5.1V 500MW ALF2 |
|
JANTXV1N4623C-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO35 |
|
JANTX1N3031DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO213AB |
