English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 68 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 240 Ohms |
| 电流 - 反向泄漏@ vr: | 50 nA @ 47.6 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | -65°C ~ 200°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AC, MINI-MELF, SOD-80 |
| 供应商设备包: | LLDS; MiniMelf |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX85B6V2-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 1.3W DO41 |
|
SMAZ5934B-M3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW DO214AC |
|
BZX84C6V8-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 300MW SOT23-3 |
|
BZX584C13-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 200MW SOD523 |
|
JAN1N4100-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V DO35 |
|
BZD27B5V1P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 800MW DO219AB |
|
SML4740AHE3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 1W DO214AC |
|
1N4778Roving Networks / Microchip Technology |
DIODE ZENER 8.5V 500MW DO35 |
|
NZX2V4A,133Nexperia |
DIODE ZENER 2.4V 500MW ALF2 |
|
1PMT5940A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 43V 3W DO216AA |
|
BZX85C68-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 1.3W DO41 |
|
SMAJ5930AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 3W DO214AC |
|
1N5259B TR PBFREECentral Semiconductor |
DIODE ZENER 39V 500MW DO35 |
