English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 12 V |
| 宽容: | ±10% |
| 功率 - 最大值: | 2 W |
| 阻抗（最大）（zzt）: | 6.5 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 9.1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX84B5V1LT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 5.1V 225MW SOT23-3 |
|
BZT52C16-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 410MW SOD123 |
|
MMSZ2V7ET1Rochester Electronics |
DIODE ZENER 2.7V 500MW SOD123 |
|
HZK12ATR-S-ERochester Electronics |
DIODE ZENER 0.5W |
|
1N4759AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 62V 1W DO204AL |
|
BZT52-C11XRochester Electronics |
DIODE ZENER 11V 350MW SOD123 |
|
BZD27B4V7P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 800MW DO219AB |
|
CDLL3045ARoving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
UFZVFHTE-178.2BROHM Semiconductor |
DIODE ZENER 8.2V 500MW UMD2 |
|
DDZ9693Q-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 7.5V 500MW SOD123 |
|
EDZVFHT2R8.2BROHM Semiconductor |
DIODE ZENER 8.2V 150MW EMD2 |
|
JAN1N4111D-1Roving Networks / Microchip Technology |
DIODE ZENER 17V DO35 |
|
BZG03B240-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 240V 1.25W DO214AC |
