类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 24 V |
宽容: | ±1% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 70 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 17 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N4757CPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 51V 1W DO204AL |
|
CMDZ5221B TR PBFREECentral Semiconductor |
DIODE ZENER 2.4V 500MW SOD323 |
|
NTE5273ANTE Electronics, Inc. |
DIODE ZENER 45V 50W DO5 |
|
PDZVTR2.7BROHM Semiconductor |
DIODE ZENER 2.7V 1W PMDTM |
|
BZX384B22-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 200MW SOD323 |
|
BZD27C27P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
1N5229B TR PBFREECentral Semiconductor |
DIODE ZENER 4.3V 500MW DO35 |
|
BZD27B4V7P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 800MW DO219AB |
|
1N3155AE3Roving Networks / Microchip Technology |
DIODE ZENER 8.4V 500MW DO35 |
|
MMSZ27ET1GRochester Electronics |
DIODE ZENER 27V 500MW SOD123 |
|
BZX84C62-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 300MW SOT23-3 |
|
PZU3.9BL,315Rochester Electronics |
DIODE ZENER 3.9V 250MW DFN1006-2 |
|
MMSZ4711T1Rochester Electronics |
DIODE ZENER 27V 500MW SOD123 |