类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 27 V |
宽容: | ±2% |
功率 - 最大值: | 3 W |
阻抗(最大)(zzt): | 23 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 20.6 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-216AA |
供应商设备包: | DO-216AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5525B-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
BZX79-C9V1,143Nexperia |
DIODE ZENER 9.1V 400MW ALF2 |
|
1N5252B-TPMicro Commercial Components (MCC) |
DIODE ZENER 24V 500MW DO35 |
|
1N5235B A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 6.8V 500MW DO35 |
|
BZX84J-B9V1,115Nexperia |
DIODE ZENER 9.1V 550MW SOD323F |
|
MMBZ5232B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 225MW SOT23-3 |
|
BZT52C22-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 22V 500MW SOD123 |
|
BZD17C8V2P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 800MW DO219AB |
|
MMSZ5237B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW SOD123 |
|
JANS1N4965USRoving Networks / Microchip Technology |
DIODE ZENER 20V 5W D5B |
|
GLL4761-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1W MELF |
|
ABZT52C4V3-HFComchip Technology |
DIODE ZENER 4.3V 500MW SOD123 |
|
BZD27C20P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 800MW DO219AB |