类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/435 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 39 V |
宽容: | ±5% |
功率 - 最大值: | - |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 10 nA @ 29.7 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CZRA4751-HFComchip Technology |
DIODE ZENER 30V 1W DO214AC |
|
ACZRW4689-GComchip Technology |
DIODE ZENER 5.1V 350MW SOD123FL |
|
HZS24NB3TA-ERochester Electronics |
DIODE ZENER 0.4W |
|
BZX384C16-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 200MW SOD323 |
|
MMSZ5259BDiotec Semiconductor |
DIODE ZENER 39V 500MW SOD123F |
|
BZG05C82-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 1.25W DO214AC |
|
MMXZ5251B-TPMicro Commercial Components (MCC) |
DIODE ZENER 22V 200MW SOD323 |
|
1N5243C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 500MW DO35 |
|
BZT52C39-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 410MW SOD123 |
|
MMBZ4715-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 350MW SOT23-3 |
|
JANTXV1N3025B-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 1W DO41 |
|
NTE5101ANTE Electronics, Inc. |
DIODE ZENER 160V 1W DO35 |
|
1N5923BP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1.5W DO204AL |