English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/115 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 62 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 125 Ohms |
| 电流 - 反向泄漏@ vr: | 10 µA @ 47.1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF (Glass) |
| 供应商设备包: | DO-213AB (MELF, LL41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZMY91-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 91V 1W DO213AB |
|
BZT52C30T-TPMicro Commercial Components (MCC) |
DIODE ZENER 30V 100MW SOD523 |
|
NTE5293ANTE Electronics, Inc. |
DIODE ZENER 175V 50W DO5 |
|
BZT52B47S-F2-0000HF |
ZENER DIODE 47V 0.2W SOD-323 |
|
1N4985USRoving Networks / Microchip Technology |
DIODE ZENER 130V 5W D5B |
|
PLVA659AVLNexperia |
DIODE ZENER SOT23/TO236AB |
|
BZT52C75-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 410MW SOD123 |
|
BZD17C160P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 160V 800MW DO219AB |
|
JAN1N4978DUSRoving Networks / Microchip Technology |
DIODE ZENER 68V 5W D5B |
|
FLZ27VBRochester Electronics |
DIODE ZENER 25.6V 500MW SOD80 |
|
CDZFHT2RA3.9BROHM Semiconductor |
DIODE ZENER 4.03V 100MW VMN2 |
|
1PGSMA4741 M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 1.25W DO214AC |
|
BZV55C36 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 36V 500MW MINI MELF |
