English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 4.7 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 550 mW |
| 阻抗（最大）（zzt）: | 80 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 2 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 100 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SC-90, SOD-323F |
| 供应商设备包: | SOD-323F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PZU15B2A,115Nexperia |
DIODE ZENER 15V 320MW SOD323 |
|
BZX884S-B5V6YLNexperia |
DIODE ZENER 5.6V 365MW 2DFN |
|
JANTXV1N4625D-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO35 |
|
SMBJ5923CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 2W SMBJ |
|
BZT52C3V3S-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 3.3V 200MW SOD323 |
|
BZT52C43-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 410MW SOD123 |
|
1N821ARoving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
MMSZ4684-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW SOD123 |
|
BZT55B43 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 500MW MINI MELF |
|
MMSZ4710-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 25V 500MW SOD123 |
|
BZD27C8V2PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 8.2V 1W SUB SMA |
|
BZX85C100-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 100V 1.3W DO41 |
|
JAN1N4965USSemtech |
DIODE ZENER 20V 500W |
